IRF7832Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 21A
Packaging: Tube
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Input Capacitance (Ciss) @ Vds: 3860pF @ 15V


Parameters:

Technical/Catalog Information	IRF7832Z
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	3.8 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	3860pF @ 15V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	45nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF7832Z IRF7832Z