MOSFET N-CH 30V 20A 8-SOIC
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Parameter | Max. | Units | |
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ± 20 | |
ID @ TA = 25 | Continuous Drain Current, VGS @ 10V | 20 | A |
ID @ TA = 70 | Continuous Drain Current, VGS @ 10V | 16 | |
IDM | Pulsed Drain Current | 160 | |
PD @TA = 25 | Power Dissipation | 2.5 | W |
PD @TA = 70 | Power Dissipation | 1.6 | |
Linear Derating Factor | 0.02 | W/ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 155 |
Technical/Catalog Information | IRF7832 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 20A |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 20A, 10V |
Input Capacitance (Ciss) @ Vds | 3860pF @ 15V |
Power - Max | 2.5W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 45nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRF7832 IRF7832 |