IRF7822

Features:

• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses




Pinout






Specifications

Parameter		Symbol	IRF7807 V	Units
Drain-Source Voltage		VDS	30	V
Gate-Source Voltage		VGS	±12
Continuous Drain or Source Current (VGS 4.5V)	TA = 25	ID	18	A
	TA = 70		13
Pulsed Drain Current		IDM	150
Power Dissipation	TA = 25	PD	3.1	W
	TA = 70		3.0
Junction & Storage Temperature Range		TJ, TSTG	55 to 150
Continuous Source Current (Body Diode)		IS	3.8	A
Pulsed source Current		ISM	150

Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

The IRF7822 has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7822 offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications.

The package of the IRF7822 is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application.