MOSFET N-CH 30V 8.3A 8-SOIC
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Series: | FETKY™ | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Diode (Isolated) | Drain to Source Voltage (Vdss): | 30V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 8.3A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7A, 4.5V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 1V @ 250µA | Gate Charge (Qg) @ Vgs: | 14nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | - | ||
Power - Max: | 2.5W | Mounting Type: | Surface Mount | ||
Package / Case: | 8-SOIC (0.154", 3.90mm Width) | Supplier Device Package: | 8-SO |
Parameter | Symbol | Max. | Units | |
Drain-Source Voltage | VDS | 30 | V | |
Gate-Source Voltage | VGS | ±20 | ||
Continuous Drain or Source Current (VGS 4.5V) |
25 | ID | 8.3 | A |
70 | 6.6 | |||
Pulsed Drain Current | IDM | 66 | ||
Power Dissipation | 25 | PD | 2.5 | W |
70 | 1.6 | |||
Schottky and Body Diode Average ForwardCurrent |
25 | IF (AV) | 3.7 | A |
70 | 2.3 | |||
Junction & Storage Temperature Range | TJ, TSTG | 55 to 150 |
The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes IRF7807VD2 offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
The SO-8 IRF7807VD2 has been modified through a customized leadframe for enhanced thermal characteristics. The SO- 8 package is designed for vapor phase, infrared or wave soldering techniques.