FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
FET Feature: Standard
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Packaging: Tube
Supplier Device Package: 8-SO
Gate Charge (Qg) @ Vgs: 14nC @ 5V
Current - Continuous Drain (Id) @ 25° C: 8.3A
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
Features: • N Channel Application Specific MOSFET
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching LossesPinout
Specifications
| Parameter |
Symbol |
IRF7807 V |
Units |
| Drain-Source Voltage |
VDS |
30 |
V |
| Gate-Source Voltage |
VGS |
±20 |
Continuous Drain or Source
Current (VGS 4.5V) |
TA = 25 |
ID |
8.3 |
A |
| TA = 70 |
6.6 |
| Pulsed Drain Current |
IDM |
66 |
| Power Dissipation |
TA = 25 |
PD |
2.5 |
W |
| TA = 70 |
1.6 |
| Junction & Storage Temperature Range |
TJ, TSTG |
55 to 150 |
|
| Continuous Source Current (Body Diode) |
IS |
2.5 |
A |
| Pulsed source Current |
ISM |
66 |
DescriptionThis new device of the IRF7807V employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.
A pair of IRF7807V devices provides the best cost/ performance solution for system voltages, such as 3.3V and 5V.
IRF7807V Data Sheet
