IRF7807D2

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Feature: Diode (Isolated)
Packaging: Tube
Supplier Device Package: 8-SO
Gate Charge (Qg) @ Vgs: 17nC @ 5V
Current - Continuous Drain (Id) @ 25° C: 8.3A
Manufacturer: International Rectifier
Series: FETKY™
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V


Features:

• Co-Pack N-channel HEXFETÒ Power MOSFET and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier




Pinout






Specifications

Parameter		Symbol	Max.	Units
Drain-Source Voltage		VDS	30	V
Gate-Source Voltage		VGS	±12
Continuous Drain or Source Current (VGS 4.5V)	25	ID	8.3	A
	70		6.6
Pulsed Drain Current		IDM	66
Power Dissipation	25	PD	2.5	W
	70		1.6
Schottky and Body Diode Average ForwardCurrent	25	IF (AV)	3.7	A
	70		2.3
Junction & Storage Temperature Range		TJ, TSTG	55 to 150

Description

The FETKY™ family of Co-Pack HEXFETÒ MOSFETs and Schottky diodes IRF7807D2 offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7807D2 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.




Parameters:

Technical/Catalog Information	IRF7807D2
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8.3A
Rds On (Max) @ Id, Vgs	25 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds	-
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Diode (Isolated)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF7807D2 IRF7807D2