IRF7807D1TR

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Packaging: Tape & Reel (TR)
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Feature: Diode (Isolated)
Supplier Device Package: 8-SO
Gate Charge (Qg) @ Vgs: 17nC @ 5V
Current - Continuous Drain (Id) @ 25° C: 8.3A
Manufacturer: International Rectifier
Series: FETKY™
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V


Parameters:

Technical/Catalog Information	IRF7807D1TR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8.3A
Rds On (Max) @ Id, Vgs	25 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds	-
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Diode (Isolated)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF7807D1TR IRF7807D1TR