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IRF7807D1

MOSFET N-CH 30V 8.3A 8-SOIC

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SeekIC No. : 004376830 Detail

IRF7807D1: MOSFET N-CH 30V 8.3A 8-SOIC

IRF7807D1 Data Sheet

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Part Number:
IRF7807D1
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Co-Pack N-channel HEXFETÒ Power MOSFET and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier




Pinout

Connection Diagram




Specifications

Parameter Symbol Max. Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain or Source
Current (VGS 4.5V)		 25 ID 8.3 A
70 6.6
Pulsed Drain Current IDM 66
Power Dissipation 25 PD 2.5 W
70 1.6
Schottky and Body Diode
Average ForwardCurrent		 25 IF (AV) 3.5
A
70 2.2
Junction & Storage Temperature Range TJ, TSTG 55 to 150





Description

The FETKY™ family of Co-Pack HEXFETÒMOSFETs and Schottky diodes IRF7807D1 offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7807D1 has been modified through a customized leadframe for enhanced thermal characteristics. The SO- 8 package is designed for vapor phase, infrared or wave soldering techniques.






Parameters:

Technical/Catalog InformationIRF7807D1
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C8.3A
Rds On (Max) @ Id, Vgs25 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs17nC @ 5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureDiode (Isolated)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7807D1
IRF7807D1



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