IRF7807

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Packaging: Tube
Supplier Device Package: 8-SO
Gate Charge (Qg) @ Vgs: 17nC @ 5V
Current - Continuous Drain (Id) @ 25° C: 8.3A
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V


Features:

• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses


Pinout




Specifications

Parameter		Symbol	IRF7807	IRF7807A	Units
Drain-Source Voltage		VDS	30		V
Gate-Source Voltage		VGS	±12
Continuous Drain or Source Current (VGS 4.5V)	25	ID	8.3	8.3	A
	70		6.6	6.6
Pulsed Drain Current		IDM	66	66
Power Dissipation	25	PD	2.5		W
	70		1.6
Junction & Storage Temperature Range		TJ, TSTG	55 to 150		A
Continuous Source Current (Body Diode)		IS	2.5	2.5
Pulsed source Current		ISM	66	66

Description

These new devices of the IRF7807 employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.

A pair of IRF7807 devices provides the best cost/ performance solution for system voltages, such as 3.3V and 5V.

Parameters:

Technical/Catalog Information	IRF7807
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8.3A
Rds On (Max) @ Id, Vgs	25 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds	-
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF7807 IRF7807