IRF7805ZPBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 8.7 mOhms


Features:

·Very Low RDS(on) at 4.5V VGS
·Ultra-Low Gate Impedance
·Fully Characterized Avalanche Voltage and Current
·100% tested for Rg


Application

·High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems.
·Lead-Free


Pinout




Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	30	V
VGS	Gate-to-Source Voltage	± 20
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	16	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	12
IDM	Pulsed Drain Current	120a
PD @ TA = 25	Power Dissipation	2.5	W
PD @ TA = 70	Power Dissipation	1.6
	Linear Derating Factor	0.02	W/
TJ, TSTG	Operating Junction and Storage Temperature Range	-55 to + 150

Parameters:

Technical/Catalog Information	IRF7805ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	6.8 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	2080pF @ 15V
Power - Max	2.5W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	27nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7805ZPBF IRF7805ZPBF