IRF7805A

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: -
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V
Gate Charge (Qg) @ Vgs: 31nC @ 5V


Features:

• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses


Pinout




Specifications

Parameter		Symbol	IRF7805	IRF7805A	Units
Drain-Source Voltage		VDS	30		V
Gate-Source Voltage		VGS	±12
Continuous Drain or Source Current (VGS 4.5V)	25	ID	13	13	A
	70		10	10
Pulsed Drain Current		IDM	100	100
Power Dissipation	25	PD	2.5		W
	70		1.6
Junction & Storage Temperature Range		TJ, TSTG	55 to 150		A
Continuous Source Current (Body Diode)		IS	2.5	2.5
Pulsed source Current		ISM	106	106

Description

These new devices of the IRF7805A employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.

The IRF7805/IRF7805A offers maximum efficiency for mobile CPU core DC-DC converters.