Features: • N Channel Application Specific MOSFETs• Ideal for Mobile DC-DC Converters• Low Conduction Losses• Low Switching LossesPinoutSpecifications Parameter Symbol IRF7805 IRF7805A Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 Co...
IRF7805: Features: • N Channel Application Specific MOSFETs• Ideal for Mobile DC-DC Converters• Low Conduction Losses• Low Switching LossesPinoutSpecifications Parameter Symbol ...
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Parameter | Symbol | IRF7805 | IRF7805A | Units | |
Drain-Source Voltage | VDS | 30 | V | ||
Gate-Source Voltage | VGS | ±12 | |||
Continuous Drain or Source Current (VGS 4.5V) |
25 | ID | 13 | 13 | A |
70 | 10 | 10 | |||
Pulsed Drain Current | IDM | 100 | 100 | ||
Power Dissipation | 25 | PD | 2.5 | W | |
70 | 1.6 | ||||
Junction & Storage Temperature Range | TJ, TSTG | 55 to 150 |
A | ||
Continuous Source Current (Body Diode) | IS | 2.5 | 2.5 | ||
Pulsed source Current | ISM | 106 | 106 |
These new devices of the IRF7805 employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.
The IRF7805/IRF7805A offers maximum efficiency for mobile CPU core DC-DC converters.