IRF7757

Features:

·Ultra Low On-Resistance
·Dual N-Channel MOSFET
·Very Small SOIC Package
·Low Profile (< 1.2mm)
·Available in Tape & Reel
·Common Drain Configuration


Pinout




Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	20	V
ID @ TA = 25	Continuous Drain Current, VGS @ 4.5V	4.8	A
ID @ TA = 70	Continuous Drain Current, VGS @ 4.5V	3.9
IDM	Pulsed Drain Current	19
PD @TA = 25	Power Dissipation	1.2	W
PD @TA = 70	Power Dissipation	0.76
	Linear Derating Factor	9.5	W/
VGS	Gate-to-Source Voltage	±12	V
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

HEXFET® Power MOSFETs IRF7757 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management.

The TSSOP-8 package IRF7757 has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.