FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 P-Channel (Dual)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Drain to Source Voltage (Vdss): 12V
Gate Charge (Qg) @ Vgs: 18nC @ 4.5V
Power - Max: 1W
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Current - Continuous Drain (Id) @ 25° C: 4.3A
Series: HEXFET®
Manufacturer: International Rectifier
Packaging: Tube
Input Capacitance (Ciss) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
Specifications
|
Parameter |
Max. |
Units |
|
VDS |
Drain- Source Voltage |
-12 |
V |
|
ID @ TA = 25°C |
Continuous Drain Current, VGS @ -4.5V |
-4.3 |
A |
|
ID @ TA= 70°C |
Continuous Drain Current, VGS @ -4.5V |
-3.5 |
|
IDM |
Pulsed Drain Current |
-17 |
|
PD @TA = 25°C |
Maximum Power Dissipationƒ |
1.0 |
W
|
|
PD @TA = 70°C |
Maximum Power Dissipationƒ |
0.64 |
W |
|
|
Linear Derating Factor |
8.0 |
mW/°C |
|
VGSM |
Gate-to-Source Voltage |
±8.0 |
V |
|
TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
°C |
DescriptionHEXFET® Power MOSFETs IRF7756 from International Rectifier utilize advanced processing techniques to achieve ex-tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter-national Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package IRF7756 has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
IRF7756 Data Sheet
