FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power - Max: 1W
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Gate Charge (Qg) @ Vgs: 17nC @ 4.5V
Series: HEXFET®
Manufacturer: International Rectifier
Packaging: Tube
Current - Continuous Drain (Id) @ 25° C: 3.9A
Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V
Input Capacitance (Ciss) @ Vds: 1090pF @ 15V
Features: ·Ultra Low On-Resistance
·Dual P-Channel MOSFET
·Very Small SOIC Package
·Low Profile (< 1.2mm)
·Available in Tape & ReelPinout
Specifications
|
Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
-20 |
V |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ -4.5V |
-3.9 |
A |
| ID @ TA = 70 |
Continuous Drain Current, VGS @ -4.5V |
-3.1 |
| IDM |
Pulsed Drain Current |
-15 |
| PD @TA = 25 |
Maximum Power Dissipation |
1 |
W |
| PD @TA = 70 |
Maximum Power Dissipation |
0.64 |
|
Linear Derating Factor |
0.01 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionHEXFET® Power MOSFETs IRF7755 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package IRF7755 has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
IRF7755 Data Sheet
