FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 2V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 4.6A
Series: HEXFET®
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 9nC @ 4.5V
Packaging: Tube
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
Input Capacitance (Ciss) @ Vds: 861pF @ 25V
Features: ·Ultra Low On-Resistance
·Dual N-Channel MOSFET
·Very Small SOIC Package
·Low Profile (< 1.1mm)
·Available in Tape & ReelPinout
Specifications
|
Parameter |
Max. |
Units |
| VDS |
Drain- Source Voltage |
-20 |
V |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
±4.6 |
A |
| ID @ TC = 70 |
Continuous Drain Current, VGS @ 10V |
±3.7 |
| IDM |
Pulsed Drain Current |
±37 |
| PD @TA = 25 |
Power Dissipation |
1.0 |
W |
| PD @TA = 70 |
Power Dissipation |
0.64 |
|
Linear Derating Factor |
8.0 |
W/ |
| VGS |
Gate-to-Source Voltage |
±12 |
V |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionHEXFET® power MOSFETs IRF7752 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 package IRF7752, has 45% less footprint area of the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the TSSOP-8 IRF7752 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
IRF7752 Data Sheet
