IRF7726

MOSFET P-CH 30V 7A MICRO8

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IRF7726 Picture
SeekIC No. : 003432460 Detail

IRF7726: MOSFET P-CH 30V 7A MICRO8

floor Price/Ceiling Price

Part Number:
IRF7726
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET P-Channel, Metal Oxide Gain : 19.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 7A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 26 mOhm @ 7A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) @ Vgs: 69nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2204pF @ 25V
Power - Max: 1.79W Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 7A
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Manufacturer: International Rectifier
Supplier Device Package: Micro8?
Gate Charge (Qg) @ Vgs: 69nC @ 10V
Power - Max: 1.79W
Rds On (Max) @ Id, Vgs: 26 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds: 2204pF @ 25V


Features:

·Ultra Low On-Resistance
·P-Channel MOSFET
·Very Small SOIC Package
·Low Profile (< 1.2mm)
·Available in Tape & Reel





Specifications

Parameter Max. Units
VDS Drain- Source Voltage -30 V
ID @ TA = 25 Continuous Drain Current, VGS @ -10V -7.0 A
ID @ TA = 70 Continuous Drain Current, VGS @ -10V -5.7
IDM Pulsed Drain Current -28
PD @TA = 25 Maximum Power Dissipation 1.79 W
PD @TA = 70 Maximum Power Dissipation 1.14 W
Linear Derating Factor 0.01 W/
VGS Gate-to-Source Voltage ± 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150





Description

HEXFET® Power MOSFETs IRF7726 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management.

The new Micro8 package IRF7726, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.





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