IRF7707

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Series: HEXFET®
Power - Max: 1.5W
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Current - Continuous Drain (Id) @ 25° C: 7A
Packaging: Tube
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 47nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds: 2361pF @ 15V


Features:

·Ultra Low On-Resistance
·P-Channel MOSFET
·Very Small SOIC Package
·Low Profile (< 1.2mm)
·Available in Tape & Reel




Pinout






Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	-20	V
ID @ TA = 25	Continuous Drain Current, VGS @ -4.5V	-7.0	A
ID @ TA = 70	Continuous Drain Current, VGS @ -4.5V	-5.7
IDM	Pulsed Drain Current	-28
PD @TA = 25	Maximum Power Dissipation	1.5	W
PD @TA = 70	Maximum Power Dissipation	1.0
	Linear Derating Factor	0.01	W/
VGS	Gate-to-Source Voltage	±12	V
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

HEXFET® Power MOSFETs of the IRF7707 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.

The IRF7707 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.