IRF7706

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Series: HEXFET®
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Current - Continuous Drain (Id) @ 25° C: 7A
Packaging: Tube
Gate Charge (Qg) @ Vgs: 72nC @ 10V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds: 2211pF @ 25V
Power - Max: 1.51W


Features:

·Ultra Low On-Resistance
·P-Channel MOSFET
·Very Small SOIC Package
·Low Profile (< 1.2mm)
·Available in Tape & Reel




Pinout






Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	-30	V
ID @ TA = 25	Continuous Drain Current, VGS @ -10V	-7.0	A
ID @ TA = 70	Continuous Drain Current, VGS @ -10V	-5.7
IDM	Pulsed Drain Current	-28
PD @ TA = 25	Maximum Power Dissipation	1.51	W
PD @ TA = 70	Maximum Power Dissipation	0.96
	Linear Derating Factor	0.01	W/
VGS	Gate-to-Source Voltage	±20	V
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

HEXFET® Power MOSFETs IRF7706 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management.

The TSSOP-8 package IRF7706 has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.