MOSFET P-CH 40V 4.6A 8-TSSOP
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET P-Channel, Metal Oxide | Gain : | 19.5 dB | ||
Transistor Type: | - | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 40V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 4.6A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 46 mOhm @ 4.6A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 3V @ 250µA | Gate Charge (Qg) @ Vgs: | 38nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 3150pF @ 25V | ||
Power - Max: | 1.5W | Mounting Type: | Surface Mount | ||
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) | Supplier Device Package: | 8-TSSOP |
Parameter | Max. | Units | |
VDS | Drain- Source Voltage | -40 | V |
ID @ TA = 25 | Continuous Drain Current, VGS @ -10V | -4.6 | A |
ID @ TA = 70 | Continuous Drain Current, VGS @ -10V | -3.7 | |
IDM | Pulsed Drain Current | -19 | |
PD @TA = 25 | Maximum Power Dissipation | 1.5 | W |
PD @TA = 70 | Maximum Power Dissipation | 1.0 | |
Linear Derating Factor | 12 | W/ | |
VGS | Gate-to-Source Voltage | ± 20 | V |
TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 |