IRF7703

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25° C: 6A
Drain to Source Voltage (Vdss): 40V
Series: HEXFET®
Power - Max: 1.5W
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Packaging: Tube
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 62nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 5220pF @ 25V
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V


Features:

·Ultra Low On-Resistance
·P-Channel MOSFET
·Very Small SOIC Package
·Low Profile (< 1.2mm)
·Available in Tape & Reel




Pinout






Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	-40	V
ID @ TA = 25	Continuous Drain Current, VGS @ -10V	-6.0	A
ID @ TA = 70	Continuous Drain Current, VGS @ -10V	-4.7
IDM	Pulsed Drain Current	-24
PD @TA = 25	Maximum Power Dissipation	1.5	W
PD @TA = 70	Maximum Power Dissipation	0.96
	Linear Derating Factor	0.012	W/
VGS	Gate-to-Source Voltage	± 20	V
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

HEXFET® Power MOSFETs from International Rectifier IRF7703 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management.

The TSSOP-8 package IRF7703 has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.