IRF7702

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25° C: 8A
Series: HEXFET®
Power - Max: 1.5W
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Packaging: Tube
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 4.5V
Gate Charge (Qg) @ Vgs: 81nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 3470pF @ 10V


Features:

·Ultra Low On-Resistance
·-1.8V Rated
·P-Channel MOSFET
·Very Small SOIC Package
·Low Profile ( < 1.1mm)
·Available in Tape & Reel




Pinout






Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	-12	V
ID @ TA = 25	Continuous Drain Current, VGS @ -4.5V	±8.0	A
ID @ TA = 70	Continuous Drain Current, VGS @ -4.5V	±7.0
IDM	Pulsed Drain Current	±70
PD @TA = 25	Power Dissipation	1.5	W
PD @TA = 70	Power Dissipation	0.96
	Linear Derating Factor	0.01	W/
VGS	Gate-to-Source Voltage	± 8.0	V
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

HEXFET® Power MOSFETs IRF7702 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.

The TSSOP-8 package IRF7702 has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.