IRF7701

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Series: HEXFET®
Power - Max: 1.5W
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Current - Continuous Drain (Id) @ 25° C: 10A
Packaging: Tube
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 100nC @ 4.5V
Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds: 5050pF @ 10V


Features:

·Ultra Low On-Resistance
·P-Channel MOSFET
·Very Small SOIC Package
·Low Profile (< 1.1mm)
·Available in Tape & Reel


Pinout




Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	-12	V
ID @ TA = 25	Continuous Drain Current, VGS @ -4.5V	±10	A
ID @ TA = 70	Continuous Drain Current, VGS @ -4.5V	±8.0
IDM	Pulsed Drain Current	±80
PD @TA = 25	Power Dissipation	1.5	W
PD @TA = 70	Power Dissipation	0.96
	Linear Derating Factor	12	W/
VGS	Gate-to-Source Voltage	± 8.0	V
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

HEXFET® power MOSFETs from International Rectifier IRF7701 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package, has 45% less footprint area of the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium.

The low profile (<1.1mm) of the TSSOP-8 IRF7701 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.