IRF7700

MOSFET P-CH 20V 8.6A 8-TSSOP

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IRF7700 Picture
SeekIC No. : 003433351 Detail

IRF7700: MOSFET P-CH 20V 8.6A 8-TSSOP

floor Price/Ceiling Price

Part Number:
IRF7700
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/14

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET P-Channel, Metal Oxide Gain : 19.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8.6A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.6A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) @ Vgs: 89nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 4300pF @ 15V
Power - Max: 1.5W Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Series: HEXFET®
Power - Max: 1.5W
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Packaging: Tube
Current - Continuous Drain (Id) @ 25° C: 8.6A
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 89nC @ 5V
Input Capacitance (Ciss) @ Vds: 4300pF @ 15V
Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.6A, 4.5V


Features:

·Ultra Low On-Resistance
·P-Channel MOSFET
·Very Small SOIC Package
·Low Profile (< 1.1mm)
·Available in Tape & Reel



Pinout

  Connection Diagram


Specifications

  Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA = 25 Continuous Drain Current, VGS @ -4.5V ±8.6 A
ID @ TA = 70 Continuous Drain Current, VGS @ -4.5V ±6.8
IDM Pulsed Drain Current ±68
PD @TA = 25 Power Dissipation 1.5 W
PD @TA = 70 Power Dissipation 0.96
  Linear Derating Factor 0.01 W/
VGS Gate-to-Source Voltage ±12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150



Description

HEXFET® power MOSFETs IRF7700 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

The TSSOP-8 package, has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium.

The low profile (<1.1mm) of the TSSOP-8 IRF7700 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.




Parameters:

Technical/Catalog InformationIRF7700
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C8.6A
Rds On (Max) @ Id, Vgs15 mOhm @ 8.6A, 4.5V
Input Capacitance (Ciss) @ Vds 4300pF @ 15V
Power - Max1.5W
PackagingTube
Gate Charge (Qg) @ Vgs89nC @ 5V
Package / Case8-TSSOP
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7700
IRF7700



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