MOSFET MOSFT 100V 14.7A 60mOhm 8.3nC Qg
IRF7665S2TR1PBF: MOSFET MOSFT 100V 14.7A 60mOhm 8.3nC Qg
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 14.4 A | ||
Resistance Drain-Source RDS (on) : | 51 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | Direct-FET SB | Packaging : | Reel |
Technical/Catalog Information | IRF7665S2TR1PBF |
Vendor | International Rectifier (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 4.1A |
Rds On (Max) @ Id, Vgs | * |
Input Capacitance (Ciss) @ Vds | * |
Power - Max | 2.4W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 13nC @ 10V |
Package / Case | * |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF7665S2TR1PBF IRF7665S2TR1PBF IRF7665S2TR1PBFDKR ND IRF7665S2TR1PBFDKRND IRF7665S2TR1PBFDKR |