IRF7663TR

MOSFET P-CH 20V 8.2A MICRO8

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SeekIC No. : 003433565 Detail

IRF7663TR: MOSFET P-CH 20V 8.2A MICRO8

floor Price/Ceiling Price

Part Number:
IRF7663TR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET P-Channel, Metal Oxide Gain : 11.5 dB at 500 MHz
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8.2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) @ Vgs: 45nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2520pF @ 10V
Power - Max: 1.8W Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 1.8W
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 8.2A
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Gate Charge (Qg) @ Vgs: 45nC @ 5V
Manufacturer: International Rectifier
Supplier Device Package: Micro8?
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds: 2520pF @ 10V


Parameters:

Technical/Catalog InformationIRF7663TR
VendorInternational Rectifier (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C8.2A
Rds On (Max) @ Id, Vgs20 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds 2520pF @ 10V
Power - Max1.8W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs45nC @ 5V
Package / CaseMicro8?
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7663TR
IRF7663TR
IRF7663DKR ND
IRF7663DKRND
IRF7663DKR



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