IRF7663

Features:

·Trench Technology
·Ultra Low On-Resistance
·P-Channel MOSFET
·Very Small SOIC Package
·Low Profile (<1.1mm)
·Available in Tape & Reel




Pinout






Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	-20	V
ID @ TA = 25	Continuous Drain Current, VGS @ -4.5V	-8.2	A
ID @ TA = 70	Continuous Drain Current, VGS @ -4.5V	-6.6
IDM	Pulsed Drain Current	-66
PD @TA = 25	Power Dissipation	1.8	W
PD @TA = 70	Power Dissipation	1.15
	Linear Derating Factor	10	W/
EAS	Single Pulse Avalanche Energy	115	mJ
VGS	Gate-to-Source Voltage	± 12	V
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

New trench HEXFETÒ power MOSFETs from International Rectifier IRF7663 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8ä package IRF7663 has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.





Parameters:

Technical/Catalog Information	IRF7663
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	8.2A
Rds On (Max) @ Id, Vgs	20 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds	2520pF @ 10V
Power - Max	1.8W
Packaging	Tube
Gate Charge (Qg) @ Vgs	45nC @ 5V
Package / Case	Micro8?
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF7663 IRF7663