IRF7607

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power - Max: 1.8W
Current - Continuous Drain (Id) @ 25° C: 6.5A
Series: HEXFET®
Packaging: Tube
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
Gate Charge (Qg) @ Vgs: 22nC @ 5V
Input Capacitance (Ciss) @ Vds: 1310pF @ 15V
Supplier Device Package: Micro8?
Package / Case: Micro8?


Features:

·Trench Technology
·Ultra Low On-Resistance
·N-Channel MOSFET
·Very Small SOIC Package
·Low Profile (<1.1mm)
·Available in Tape & Reel


Pinout




Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	20	V
ID @ TA = 25	Continuous Drain Current, VGS @ 4.5V	6.5	A
ID @ TA = 70	Continuous Drain Current, VGS @ 4.5V	5.2
IDM	Pulsed Drain Current	50
PD @TA = 25	Power Dissipation	1.8	W
PD @TA = 70	Power Dissipation	1.2	W
	Linear Derating Factor	0.014	W/
VGS	Gate-to-Source Voltage	±12	V
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

New trench HEXFET® power MOSFETs IRF7607 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8ä package IRF7607 has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.


Parameters:

Technical/Catalog Information	IRF7607
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	6.5A
Rds On (Max) @ Id, Vgs	30 mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1310pF @ 15V
Power - Max	1.8W
Packaging	Tube
Gate Charge (Qg) @ Vgs	22nC @ 5V
Package / Case	Micro8?
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF7607 IRF7607