IRF7534D1

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 1.25W
FET Feature: Diode (Isolated)
Current - Continuous Drain (Id) @ 25° C: 4.3A
Packaging: Tube
Gate Charge (Qg) @ Vgs: 15nC @ 5V
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Manufacturer: International Rectifier
Supplier Device Package: Micro8?
Series: FETKY™
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) @ Vds: 1066pF @ 10V


Features:

·Co-packaged HEXFET® power MOSFET and Schottky diode
·Ultra Low On-Resistance MOSFET
·Trench technology
·Micro8TM Footprint
·Available in Tape & Reel


Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	-20	V
ID @ TA = 25	Continuous Drain Current, VGS @ -4.5V	-4.3	A
ID @ TA = 70	Continuous Drain Current, VGS @ -4.5V	-3.4
IDM	Pulsed Drain Current	-34
PD @TA = 25	Maximum Power Dissipation	1.25	W
PD @TA = 70	Maximum Power Dissipation	0.8
	Linear Derating Factor	010	W/
VGS	Gate-to-Source Voltage	±12	V
dv/dt	Peak Diode Recovery dv/dt	1.1	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

The FETKY family of co-packaged MOSFETs and Schottky diodes IRF7534D1 offers the designer an innovative, board space saving solution for switching regulator and power management applications. International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications, such as cell phones, PDAs, etc.

The Micro8TM package IRF7534D1 makes an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application environments such as portable electronics



Parameters:

Technical/Catalog Information	IRF7534D1
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.3A
Rds On (Max) @ Id, Vgs	55 mOhm @ 4.3A, 4.5V
Input Capacitance (Ciss) @ Vds	1066pF @ 10V
Power - Max	1.25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15nC @ 5V
Package / Case	Micro8?
FET Feature	Diode (Isolated)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF7534D1 IRF7534D1