IRF7530

Features:

·Trench Technology
·Ultra Low On-Resistance
·Dual N-Channel MOSFET
·Very Small SOIC Package
·Low Profile (<1.1mm)
·Available in Tape & Reel




Pinout






Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	20	V
ID @ TA = 25	Continuous Drain Current, VGS @ 4.5V	5.4	A
ID @ TA = 70	Continuous Drain Current, VGS @ 4.5V	4.3
IDM	Pulsed Drain Current	40
PD @TA = 25	Power Dissipation	1.3	W
PD @TA = 70	Power Dissipation	0.80
	Linear Derating Factor	10	W/
EAS	Single Pulse Avalanche Energy	33	mJ
VGS	Gate-to-Source Voltage	± 12	V
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

New trench HEXFET power MOSFETs IRF7530 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8 package IRF7530 has half the footprint area of the standard SO-8. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.