MOSFET N-CH 30V 2.7A MICRO-8
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Series: | FETKY™ | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Diode (Isolated) | Drain to Source Voltage (Vdss): | 30V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 2.7A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 1.7A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 1V @ 250µA | Gate Charge (Qg) @ Vgs: | 12nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 210pF @ 25V | ||
Power - Max: | 1.25W | Mounting Type: | Surface Mount | ||
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Supplier Device Package: | Micro8? |
Parameter | Max. | Units | |
ID @ TA = 25 | Continuous Drain Current, VGS @ 10V | 2.7 | A |
ID @ TA = 70 | 2.1 | ||
IDM | Pulsed Drain Current | 21 | |
PD @TA = 25 | Power Dissipation | 1.25 | W |
PD @TA = 70 | 0.8 | ||
Linear Derating Factor | 10 | mW/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
dv/dt | Peak Diode Recovery dv/dt | 6.2 | V/ns |
TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 |
Technical/Catalog Information | IRF7523D1 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2.7A |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 1.7A, 10V |
Input Capacitance (Ciss) @ Vds | 210pF @ 25V |
Power - Max | 1.25W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 12nC @ 10V |
Package / Case | Micro8? |
FET Feature | Diode (Isolated) |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRF7523D1 IRF7523D1 |