Specifications Parameter Max Units N-Channel P-Channel VDS Drain-Source Voltage 30 -30 V ID @ TA = 25°C Continuous Drain Current, VGS 2.7 -2.0 ID @ TA = 70°C Continuous Drain Current, VGS 2.1 -1.6 A IDM Pulsed Drain Current ...
IRF7509PbF: Specifications Parameter Max Units N-Channel P-Channel VDS Drain-Source Voltage 30 -30 V ID @ TA = 25°C Continuous Drain Current, VGS 2.7 -2.0 ...
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Parameter |
Max |
Units | ||
N-Channel |
P-Channel |
|||
VDS | Drain-Source Voltage |
30 |
-30 |
V |
ID @ TA = 25°C | Continuous Drain Current, VGS |
2.7 |
-2.0 |
|
ID @ TA = 70°C | Continuous Drain Current, VGS |
2.1 |
-1.6 |
A |
IDM | Pulsed Drain Current |
21 |
-16 |
|
PD @TA = 25°C | Maximum Power Dissipation |
1.25 |
W | |
PD @TA = 70°C | Maximum Power Dissipation |
0.8 |
W | |
Linear Derating Factor |
10 |
mW/°C | ||
VGS | Gate-to-Source Voltage |
± 20 |
V | |
VGSM | Gate-to-Source Voltage Single Pulse tp<10S |
30 |
V | |
dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns | |
TJ , TSTG | Junction and Storage Temperature Range |
-55 to + 150 |
°C | |
Soldering Temperature, for 10 seconds |
240 (1.6mm from case) |
Fifth Generation HEXFETs IRF7509PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8 package IRF7509PbF, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.