IRF7507TRPBF

MOSFET MOSFT DUAL N/PCh 20V 2.4A Micro 8

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IRF7507TRPBF Picture
SeekIC No. : 00149907 Detail

IRF7507TRPBF: MOSFET MOSFT DUAL N/PCh 20V 2.4A Micro 8

floor Price/Ceiling Price

US $ .17~.51 / Piece | Get Latest Price
Part Number:
IRF7507TRPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.51
  • $.29
  • $.18
  • $.17
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/8/14

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 12 V Continuous Drain Current : 2.4 A
Resistance Drain-Source RDS (on) : 140 mOhms Packaging : Reel    

Description

Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel
Gate-Source Breakdown Voltage : 12 V
Drain-Source Breakdown Voltage : 20 V
Transistor Polarity : N and P-Channel
Continuous Drain Current : 2.4 A
Resistance Drain-Source RDS (on) : 140 mOhms


Description

The IRF7507TRPBF is one member of the IRF7507 family which is designed as the HEXFET power MOSFET that is available in the standard SOT-23 package to produce a HEXFET power MOSFET with the industry's smallest footprint. This package, dubbed the micro3, is ideal for applications where printed circuit board space is at s premium. The low profile of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

Features of the IRF7507TRPBF are:(1)generation V technology;(2)ultra low on-resistance;(3)N-channel MOSFET;(4)SOT-23 footprint;(5)low profile (<1.1 mm);(6)available in tape and reel;(7)fast switching.

The absolute maximum ratings of the IRF7507TRPBF can be summarized as:(1)continuous drain current, VGS @ 4.5 V ID @ TA=70 : 1.9 A or -1.4 A;(2)continuous drain current, VGS @ 4.5 V ID @ TA=25 : 2.4 A or -1.7 A A;(3)pulsed drain current: 19 A or -14 A A;(4)power dissipation: 1.25 W or 0.8 W;(5)linear derating factor: 10 mW/;(6)gate-to-source voltage: +/- 12 V;(7)peak diode recovery dv / dt: 5.0 V/ns;(8)junction and storage temperature range: -55 to +150 . If you want to know more information such as the electrical characteristics about the IRF7507TRPBF, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog InformationIRF7507TRPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.4A, 1.7A
Rds On (Max) @ Id, Vgs140 mOhm @ 1.7A, 4.5V
Input Capacitance (Ciss) @ Vds 260pF @ 15V
Power - Max1.25W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs8nC @ 4.5V
Package / CaseMicro8?
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF7507TRPBF
IRF7507TRPBF



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