MOSFET N-CH 150V 5.2A 8-SOIC
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Parameter | Max. | Units | |
VDS | Drain-Source Voltage | 150 | V |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V | 5.2 | A |
ID @ TA = 100°C | Continuous Drain Current, VGS @ 10V | 3.7 | A |
IDM | Pulsed Drain Current | 42 | A |
PD @TA = 25°C | Power Dissipation | 3.0 | W |
Linear Derating Factor | 0.02 | mW/°C | |
dv/dt | Peak Diode Recovery dv/dt | 3.0 | V/ns |
VGS | Gate-to-Source Voltage | ± 20 | V |
TJ , TSTG | Junction and Storage Temperature Range | -55 to + 175 | °C |
Technical/Catalog Information | IRF7494 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 5.2A |
Rds On (Max) @ Id, Vgs | 44 mOhm @ 3.1A, 10V |
Input Capacitance (Ciss) @ Vds | 1750pF @ 25V |
Power - Max | 3W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 54nC @ 10V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRF7494 IRF7494 |