IRF7492

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 3.7A
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss): 200V
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 59nC @ 10V
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V
Input Capacitance (Ciss) @ Vds: 1820pF @ 25V


Features:

·Low Gate to Drain Charge to Reduce Switching Losses
·Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
·Fully Characterized Avalanche Voltage and Current


Application

High frequency DC-DC converters


Pinout




Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	200	V
VGS	Gate-to-Source Voltage	± 20	V
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	3.7	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	3.0
IDM	Pulsed Drain Current	30
PD @TA = 25	300 (1.6mm from case	2.5	W
	Linear Derating Factor	0.02	W/
dv/dt	Peak Diode Recovery dv/dt	9.5	V/ns
TJ, TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case