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IRF7484

Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ -10V 14 A ID @ TA = 70°C Continuous Drain Current, VGS @ -10V 11 A IDM Pulsed Drain Current 110 A PD @TA = 25°C Maximum Power Dissipation 2.5 W Linear Derating Factor 0.02 mW/...

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IRF7484: Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ -10V 14 A ID @ TA = 70°C Continuous Drain Current, VGS @ -10V 11 A IDM Pulsed Drain Curren...

IRF7484 Data Sheet

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Part Number:
IRF7484
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/14

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Description



Specifications

  Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V 14 A
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V 11 A
IDM Pulsed Drain Current 110 A
PD @TA = 25°C Maximum Power Dissipation 2.5 W
  Linear Derating Factor 0.02 mW/°C
VGS Gate-to-Source Voltage ± 8 V
EAS Single Pulse Avalanche Energy 230 mJ
IAR Avalanche Current See Fig.16c, 16d, 19, 20 A
EAR Repetitive Avalanche Energy mJ
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C



Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits IRF7484 combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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