MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 7 A |
Resistance Drain-Source RDS (on) : | 30 mOhms | Mounting Style : | SMD/SMT |
Package / Case : | SOIC-8 |
Parameter |
Max. |
Units | |
ID @TA = 25°C | Continuous Drain Current, VGS @ 10V |
7.0 |
A |
ID @TA = 70°C | Continuous Drain Current, VGS @ 10V |
5.6 | |
IDM | Pulsed Drain Current |
56 | |
PD @TA = 25°C | Power Dissipation |
2.5 |
W |
Linear Derating Factor |
0.02 |
W/°C | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
dv/dt | Peak Diode Recovery dv/dt |
3.7 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
Specifically designed for Automotive applications IRF7478QPbF. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature,fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
Technical/Catalog Information | IRF7478QPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 7A |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 4.2A, 10V |
Input Capacitance (Ciss) @ Vds | 1740pF @ 25V |
Power - Max | 2.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 31nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF7478QPBF IRF7478QPBF |