IRF7478QPBF

MOSFET

product image

IRF7478QPBF Picture
SeekIC No. : 00159413 Detail

IRF7478QPBF: MOSFET

floor Price/Ceiling Price

Part Number:
IRF7478QPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 30 mOhms Mounting Style : SMD/SMT
Package / Case : SOIC-8    

Description

Configuration :
Maximum Operating Temperature :
Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Continuous Drain Current : 7 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 30 mOhms


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· N Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· 150°C Operating Temperature
· Automotive [Q101] Qualified
· Lead-Free



Pinout

  Connection Diagram


Specifications

 
Parameter
Max.
Units
ID @TA = 25°C Continuous Drain Current, VGS @ 10V
7.0
A
ID @TA = 70°C Continuous Drain Current, VGS @ 10V
5.6
IDM Pulsed Drain Current
56
PD @TA = 25°C Power Dissipation
2.5
W
  Linear Derating Factor
0.02
W/°C
VGS Gate-to-Source Voltage
± 20
V
dv/dt Peak Diode Recovery dv/dt
3.7
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )



Description

Specifically designed for Automotive applications IRF7478QPbF. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature,fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.




Parameters:

Technical/Catalog InformationIRF7478QPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs26 mOhm @ 4.2A, 10V
Input Capacitance (Ciss) @ Vds 1740pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs31nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF7478QPBF
IRF7478QPBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Power Supplies - External/Internal (Off-Board)
Sensors, Transducers
Motors, Solenoids, Driver Boards/Modules
Prototyping Products
DE1
Crystals and Oscillators
Fans, Thermal Management
View more