IRF7478QPBF

MOSFET

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IRF7478QPBF Picture
SeekIC No. : 00159413 Detail

IRF7478QPBF: MOSFET

floor Price/Ceiling Price

Part Number:
IRF7478QPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 30 mOhms Mounting Style : SMD/SMT
Package / Case : SOIC-8    

Description

Configuration :
Maximum Operating Temperature :
Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Continuous Drain Current : 7 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 30 mOhms


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· N Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· 150°C Operating Temperature
· Automotive [Q101] Qualified
· Lead-Free



Pinout

  Connection Diagram


Specifications

 
Parameter
Max.
Units
ID @TA = 25°C Continuous Drain Current, VGS @ 10V
7.0
A
ID @TA = 70°C Continuous Drain Current, VGS @ 10V
5.6
IDM Pulsed Drain Current
56
PD @TA = 25°C Power Dissipation
2.5
W
  Linear Derating Factor
0.02
W/°C
VGS Gate-to-Source Voltage
± 20
V
dv/dt Peak Diode Recovery dv/dt
3.7
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )



Description

Specifically designed for Automotive applications IRF7478QPbF. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature,fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.




Parameters:

Technical/Catalog InformationIRF7478QPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs26 mOhm @ 4.2A, 10V
Input Capacitance (Ciss) @ Vds 1740pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs31nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF7478QPBF
IRF7478QPBF



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