MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 7.6 A | ||
Resistance Drain-Source RDS (on) : | 30 mOhms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 | Packaging : | Tube |
Technical/Catalog Information | IRF7478PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 7A |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 4.2A, 10V |
Input Capacitance (Ciss) @ Vds | 1740pF @ 25V |
Power - Max | 2.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 31nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF7478PBF IRF7478PBF |