IRF7477

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 14A
Gate Charge (Qg) @ Vgs: 38nC @ 4.5V
Packaging: Tube
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 2710pF @ 15V


Application

* High Frequency Synchronous Buck
   Converters for Computers and
   Communications


Pinout




Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-to-Source Voltage	± 20	V
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	14	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	11
IDM	Pulsed Drain CurrentÅ	110
PD @TA = 25	Maximum Power Dissipation	2.5	W
PD @TA = 70	Maximum Power Dissipation	1.6	W
	Linear Derating Factor	0.02	W/
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 150