MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 12 V | ||
Gate-Source Breakdown Voltage : | 12 V | Continuous Drain Current : | 15 A | ||
Resistance Drain-Source RDS (on) : | 8 mOhms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 | Packaging : | Tube |
Symbol | Parameter | Max. | Units |
VDS | Drain-Source Voltage | 12 | V |
VGS | Gate-to-Source Voltage | ±12 | V |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V | 15 | A |
ID @ TA = 70°C | Continuous Drain Current, VGS @ 10V | 12 | A |
IDM | Pulsed Drain Current | 120 | A |
PD @TA = 25°C | Maximum Power Dissipation | 2.5 | W |
PD @TA = 70°C | Maximum Power Dissipation | 1.6 | W |
Linear Derating Factor | 0.02 | W/°C | |
TJ , TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
Technical/Catalog Information | IRF7476PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25° C | 15A |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 15A, 4.5V |
Input Capacitance (Ciss) @ Vds | 2550pF @ 6V |
Power - Max | 2.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 40nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF7476PBF IRF7476PBF |