IRF7471PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 40 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 16 mOhms
Package / Case : SOIC-8
Continuous Drain Current : 10 A


Features:

· Ultra-Low Gate Impedance
· Very Low RDS(on)
· Fully Characterized Avalanche Voltage and Current


Application

· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
· High Frequency Buck Converters for Computer Processor Power
· Lead-Free


Pinout




Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	40	V
VGS	Gate-to-Source Voltage	± 20	V
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	10	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	8.3	A
IDM	Pulsed Drain Current	83	A
PD @TA = 25	Maximum Power Dissipation	2.5	W
PD @TA = 70	Maximum Power Dissipation	1.6	W
	Linear Derating Factor	0.02	mW/
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 150

Parameters:

Technical/Catalog Information	IRF7471PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	13 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	2820pF @ 20V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	32nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7471PBF IRF7471PBF