MOSFET N-CH 40V 10A 8-SOIC
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Symbol | Parameter | Max. | Units |
VDS | Drain-Source Voltage | 40 | V |
VGS | Gate-to-Source Voltage | ± 12 | V |
ID @ TA = 25 | Continuous Drain Current, VGS @ 10V | 10 | A |
ID @ TA = 70 | Continuous Drain Current, VGS @ 10V | 8.5 | |
IDM | Pulsed Drain Current | 85 | |
PD @TA = 25 | Maximum Power Dissipation | 2.5 | W |
PD @TA = 70 | Maximum Power Dissipation | 1.6 | W |
Linear Derating Factor | 0.02 | W/ | |
TJ , TSTG | Junction and Storage Temperature Range | -55 to + 150 |
Technical/Catalog Information | IRF7470 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 3430pF @ 20V |
Power - Max | 2.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 44nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRF7470 IRF7470 |