IRF7469

MOSFET N-CH 40V 9A 8-SOIC

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SeekIC No. : 003433604 Detail

IRF7469: MOSFET N-CH 40V 9A 8-SOIC

floor Price/Ceiling Price

US $ .62~.62 / Piece | Get Latest Price
Part Number:
IRF7469
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~475
  • Unit Price
  • $.62
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 9A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 23nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2000pF @ 20V
Power - Max: 2.5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25° C: 9A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Input Capacitance (Ciss) @ Vds: 2000pF @ 20V
Packaging: Tube
Gate Charge (Qg) @ Vgs: 23nC @ 4.5V
Supplier Device Package: 8-SO
Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V
Manufacturer: International Rectifier


Application

* High Frequency Isolated DC-DC
   Converters with Synchronous Rectification
   for Telecom and Industrial Use
* High Frequency Buck Converters for
   Computer Processor Power



Pinout

  Connection Diagram


Specifications

Symbol Parameter Max. Units
VDS Drain-Source Voltage 40 V
VGS Gate-to-Source Voltage ± 20 V
ID @ TA = 25 Continuous Drain Current, VGS @ 10V 9.0 A
ID @ TA = 70 Continuous Drain Current, VGS @ 10V 7.3
IDM Pulsed Drain Current 73
PD @TA = 25 Maximum Power Dissipation 2.5 W
PD @TA = 70 Maximum Power Dissipation 1.6 W
  Linear Derating Factor 0.02 W/
TJ , TSTG Junction and Storage Temperature Range -55 to + 150



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