MOSFET N-CH 40V 9A 8-SOIC
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 40V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 9A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 9A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 3V @ 250µA | Gate Charge (Qg) @ Vgs: | 23nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2000pF @ 20V | ||
Power - Max: | 2.5W | Mounting Type: | Surface Mount | ||
Package / Case: | 8-SOIC (0.154", 3.90mm Width) | Supplier Device Package: | 8-SO |
Symbol | Parameter | Max. | Units |
VDS | Drain-Source Voltage | 40 | V |
VGS | Gate-to-Source Voltage | ± 20 | V |
ID @ TA = 25 | Continuous Drain Current, VGS @ 10V | 9.0 | A |
ID @ TA = 70 | Continuous Drain Current, VGS @ 10V | 7.3 | |
IDM | Pulsed Drain Current | 73 | |
PD @TA = 25 | Maximum Power Dissipation | 2.5 | W |
PD @TA = 70 | Maximum Power Dissipation | 1.6 | W |
Linear Derating Factor | 0.02 | W/ | |
TJ , TSTG | Junction and Storage Temperature Range | -55 to + 150 |