IRF7468PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 17 mOhms


Application

·High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
·High Frequency Buck  Converters for Computer Processor Power
·Lead-Free


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	40	V
VGS	Gate-to-Source Voltage	±20	V
ID @ TA = 25	Continuous Drain Current,VGS @ 10V	9.4	A
ID @ TA = 70	Continuous Drain Current,VGS @ 10V	7.5
IDM	Pulsed Drain Current	75
PD @TA = 25	CMaximum Power Dissipation	2.5	W
PD @TA = 70	CMaximum Power Dissipation	1.6	W
	Linear Derating Factor	0.02	W/
TJ, TSTG	Junction and Storage Temperature Range	-55 TO +150

Parameters:

Technical/Catalog Information	IRF7468PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	9.4A
Rds On (Max) @ Id, Vgs	15.5 mOhm @ 9.4A, 10V
Input Capacitance (Ciss) @ Vds	2460pF @ 20V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	34nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7468PBF IRF7468PBF