FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Gate Charge (Qg) @ Vgs: 32nC @ 4.5V
Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V
Supplier Device Package: 8-SO
Input Capacitance (Ciss) @ Vds: 2530pF @ 15V
Manufacturer: International Rectifier
Pinout
Specifications
| Symbol |
Parameter |
Max. |
Units |
| VDS |
Drain-Source Voltage |
30 |
V |
| VGS |
Gate-to-Source Voltage |
± 12 |
V |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ 10V |
11 |
A |
| ID @ TA = 70 |
Continuous Drain Current, VGS @ 10V |
9.0 |
| IDM |
Pulsed Drain Current |
90 |
| PD @TA = 25 |
Maximum Power Dissipation |
2.5 |
W |
| PD @TA = 70 |
Maximum Power Dissipation |
1.6 |
W |
|
Linear Derating Factor |
0.02 |
W/ |
| TJ , TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
Description*High Frequency DC-DC Isolated of the IRF7467
Converters with Synchronous Rectification
for Telecom and Industrial use
* High Frequency Buck Converters for
Computer Processor Power
IRF7467 Data Sheet
