MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 17 mOhms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 | Packaging : | Tube |
Symbol | Parameter |
Max. |
Units |
VDS | Drain-Source Voltage |
30 |
V |
VGS | Gate-to-Source Voltage |
± 20 |
V |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V |
11 |
A |
ID @ TA = 70°C | Continuous Drain Current, VGS @ 10V |
9.0 | |
IDM | Pulsed Drain Current |
90 | |
PD @TA = 25°C | Maximum Power Dissipation |
2.5 |
W |
PD @TA = 70°C | Maximum Power Dissipation |
1.6 |
W |
Linear Derating Factor |
0.02 |
mW/ | |
TJ , TSTG | Junction and Storage Temperature Range |
-55 to + 150 |
Technical/Catalog Information | IRF7466PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 11A |
Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 11A, 10V |
Input Capacitance (Ciss) @ Vds | 2100pF @ 15V |
Power - Max | 2.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 23nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF7466PBF IRF7466PBF |