FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Gate Charge (Qg) @ Vgs: 23nC @ 4.5V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 2100pF @ 15V
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V
Application* High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
* High Frequency Buck Converters for
Computer Processor PowerPinout
Specifications
| Symbol |
Parameter |
Max. |
Units |
| VDS |
Drain-to-Source Voltage |
30 |
V |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ 10V |
11 |
A |
| ID @ TA = 70 |
Continuous Drain Current, VGS @ 10V |
9.0 |
| IDM |
Pulsed Drain Current |
90 |
| PD @TA = 25 |
Maximum Power Dissipation |
2.5 |
W |
| PD @TA = 70 |
Maximum Power Dissipation |
1.6 |
W |
| |
Linear Derating Factor |
0.02 |
W/ |
TJ
TSTG |
Junction and Storage Temperature Range |
-55 to + 155 |
|
IRF7466 Data Sheet
