IRF7465TRPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 150 V
Package / Case : SOIC-8
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 1.9 A


Description

The IRF7465TRPBF is a HEXFET power MOSFET.It is designed for (1)high frequency DC-DC converters; (2)lead-free.Data and specifications subject to change without notice.This product has been designed and qualified for the Consumer market.Qualifications Standards can be found on IR's Web site.

Features of the IRF7465TRPBF are:(1)low gate to drain charge to reduce switching losses; (2)fully characterized capacitance including effective coss to simplify design (see app. note AN1001); (3)fully characterized avalanche voltage and current.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).

The absolute maximum ratings of the IRF7465TRPBF can be summarized as:(1)gate-to-source voltage:±30V;(2)storage temperature range:-55 to 150;(3)operating junction temperature range:-55 to 150;(4)pulsed drain current:15A;(5)soldering temperature, for 10 seconds:300;(6)power dissipation:2.5 W.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

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Parameters:

Technical/Catalog Information	IRF7465TRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	1.9A
Rds On (Max) @ Id, Vgs	280 mOhm @ 1.14A, 10V
Input Capacitance (Ciss) @ Vds	330pF @ 25V
Power - Max	2.5W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7465TRPBF IRF7465TRPBF IRF7465PBFDKR ND IRF7465PBFDKRND IRF7465PBFDKR