IRF7464

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss): 200V
Gate Charge (Qg) @ Vgs: 14nC @ 10V
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 1.2A
Packaging: Tube
Supplier Device Package: 8-SO
Input Capacitance (Ciss) @ Vds: 280pF @ 25V
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Rds On (Max) @ Id, Vgs: 730 mOhm @ 720mA, 10V


Application

* High frequency DC-DC converters


Pinout




Specifications

	Parameter	Max.	Units
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	1.2	A
ID @ TA =70	Continuous Drain Current, VGS @ 10V	1.0
IDM	Pulsed Drain Current	10
PD @ TA = 25	Power Dissipation	2.5	W
	Linear Derating Factor	0.02	W/
VGS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	6.8	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )