IRF7463

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 14A
Gate Charge (Qg) @ Vgs: 51nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 3150pF @ 15V
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V


Application

*High Frequency DC-DC Converters
with Synchronous Rectification




Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	14	A
ID @ TC = 70	Continuous Drain Current, VGS @ 10V	11
IDM	Pulsed Drain Current	110
PD @TC = 25	Power Dissipation	2.5	W
PD @TC = 70	Power Dissipation	1.6
	Linear Derating Factor	0.02	W/
VGS	Gate-to-Source Voltage	± 12	V
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150